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ZHAI Xinmeng, LI Yuefeng, LI Shuzhi, CHEN Junfeng, JIANG Weibin, AN Yong, ZANG Tiancheng, SU Xiaofeng, ZHANG Mingpeng, ZHAO Wei, XU Liangpeng, ZOU Jun. Research of Thermal Management of IGBT Power Modules[J]. Journal of Technology, 2020, 20(3): 211-219. DOI: 10.3969/j.issn.2096-3424.2020.03.002
Citation: ZHAI Xinmeng, LI Yuefeng, LI Shuzhi, CHEN Junfeng, JIANG Weibin, AN Yong, ZANG Tiancheng, SU Xiaofeng, ZHANG Mingpeng, ZHAO Wei, XU Liangpeng, ZOU Jun. Research of Thermal Management of IGBT Power Modules[J]. Journal of Technology, 2020, 20(3): 211-219. DOI: 10.3969/j.issn.2096-3424.2020.03.002
  • With the development of insulated gate bipolar transistor (IGBT) towards high power and high integration, great improvement has been made in structure and performance. The problem of heat generation is increasingly prominent, and the requirement of heat dissipation is higher and higher. IGBT chip is the core functional device that generates heat, but the accumulation of heat exerts an adverse effect on the performance of the device. Therefore, it is of great significance to detect and manage the temperature of IGBT module effectively. The research status, research hotspot and heat dissipation technology of IGBT module were summarized, the methods of active and passive heat dissipation were introduced in detail. In order to further understand the thermal management of IGBT module, the main steps of the thermal resistance network system and the cooling system design of IGBT power module, as well as the method of enhancing the cooling by reducing the thermal resistance were introduced.
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