Study on Interface Electronic States and Fluorescence Properties on Heterostructures of HgCdTe and Perovskite Quantum Dot Films

Semiconductor heterostructure is one of the most important components of active optoelectronic devices. In this paper, the heterostructures of narrow-band gap Hg_0.7Cd_0.3Te semiconductor and wide-band gap CsPbBr₃ semiconductor quantum dot films were constructed. Through the study, it was found that Type-I heterostructures were formed by the quantum dots and Hg_0.7Cd_0.3Te film. Some electrons and holes in CsPbBr₃ perovskite quantum dot film were transferred to the valence band and conduction band of Hg_0.7Cd_0.3Te before radiation recombination, resulting in the decrease of fluorescence intensity of CsPbBr₃ perovskite quantum dot film. In addition, the photon radiation energy of perovskite was greater than the band gap of Hg_0.7Cd_0.3Te, and part of the fluorescence was absorbed by Hg_0.7Cd_0.3Te. Finally, the fluorescence intensity of CsPbBr₃ perovskite quantum dots film heterostructure decreased to 0.2 times that of CsPbBr₃ quantum dots film alone, indicating that Hg_0.7Cd_0.3Te film in Type-I heterostructures had an important modulation effect on fluorescence of CsPbBr₃ quantum dots film due to carrier transport at the interface.