Progress of B-Site Doping in Perovskite Quantum Dots

WANG Xixiang; YIN Pan; CAO Qinglou; CHEN Yong; ZOU Jun

doi:10.3969/j.issn.2096-3424.2022.04.009

WANG Xixiang, YIN Pan, CAO Qinglou, CHEN Yong, ZOU Jun. Progress of B-Site Doping in Perovskite Quantum Dots[J]. Journal of Technology, 2022, 22(4): 349-352. DOI: 10.3969/j.issn.2096-3424.2022.04.009

Citation:

WANG Xixiang, YIN Pan, CAO Qinglou, CHEN Yong, ZOU Jun. Progress of B-Site Doping in Perovskite Quantum Dots[J]. Journal of Technology, 2022, 22(4): 349-352. DOI: 10.3969/j.issn.2096-3424.2022.04.009

Citation:

WANG Xixiang, YIN Pan, CAO Qinglou, CHEN Yong, ZOU Jun. Progress of B-Site Doping in Perovskite Quantum Dots[J]. Journal of Technology, 2022, 22(4): 349-352. DOI: 10.3969/j.issn.2096-3424.2022.04.009

Progress of B-Site Doping in Perovskite Quantum Dots

Graphical Abstract

Graphical Abstract

Abstract

Abstract

Perovskite quantum dots (PQDs) have attracted a lot attention due to their excellent optical and electrical properties in many fields, such as narrow band, tunable wavelength, and high quantum efficiency. These properties have been widely used in optical field. In recent years, in order to improve the stability of perovskite quantum dots, the structure has been improved and explored. One of the effective methods is to dope ions to the quantum dots. This article introduces the research progress of quantum dot doping and briefly explores its mechanism.